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Fisicoquimica Basica Moore Pdf Free
Category: Crystallography
Category: Physical chemistry
Category: Chemical physics
Category: Atomic physics
Category: Electronic structureIn recent years, different types of semiconductor integrated circuit devices incorporating a gate electrode material having a refractory metal silicide layer, such as a cobalt silicide layer, on a gate electrode material have been developed and manufactured. An example of this semiconductor integrated circuit device is a semiconductor integrated circuit device including a low-resistance silicide layer having a cobalt silicide layer, formed on a polycrystalline silicon layer, as a gate electrode. Such a semiconductor integrated circuit device typically has a low-resistance gate electrode.
However, in such a semiconductor integrated circuit device, when a metal-silicide layer is formed on a semiconductor substrate, the impurities of the metal-silicide layer diffuse into the semiconductor substrate. In particular, the impurities of the metal-silicide layer diffuse from the surface of the metal-silicide layer into the semiconductor substrate, and thereby, the impurities incorporated into the semiconductor substrate undesirably increase. When the impurities incorporated into the semiconductor substrate are electrons, the electrons degrade the characteristics of the semiconductor device.
In order to suppress the diffusion of impurities, silicide layers formed on a semiconductor substrate, referred to as source/drain silicide layers, are generally formed under conditions such that the substrate temperatures are set to be high (about 850.degree. C.). Therefore, the diffusion of impurities is suppressed. However, when the temperature of the semiconductor device is set to be high, the transition time from an end point of the silicidation to a steady state is long. This is not desirable.
Accordingly, it is desired to reduce the temperature of the semiconductor device during the silicidation, and to reduce the time necessary for the silicidation.
One technique for reducing the temperature of a semiconductor device during the silicidation is to form a titanium silicide layer on a polycrystalline silicon layer. If a polycrystalline silicon layer formed on a semiconductor substrate is silicided with titanium, the time necessary for the silicidation is reduced.Q:
Moments of a Uniform Distribution
I want to prove that the moment generating function of a uniform distribution with parameters (0,1) is $\frac{1}{1-x}$. So we want to show that
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